BASE PART NUMBER: MJD45H11
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 8A
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 40 @ 4A, 1V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR PNP 80V 8A 90MHZ 1.75W THROUGH HOLE I-PAK
FREQUENCY - TRANSITION: 90MHZ
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MJD45H11-1G
MANUFACTURER STANDARD LEAD TIME: 4 WEEKS
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-251-3 SHORT LEADS, IPAK, TO-251AA
PACKAGING: TUBE
POWER - MAX: 1.75W
SUPPLIER DEVICE PACKAGE: I-PAK
TRANSISTOR TYPE: PNP
VCE SATURATION (MAX) @ IB, IC: 1V @ 400MA, 8A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
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