CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 4A
CURRENT - COLLECTOR CUTOFF (MAX): 100NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 40 @ 200MA, 1V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR PNP 100V 4A 40MHZ 1.5W THROUGH HOLE TO-225AA
FREQUENCY - TRANSITION: 40MHZ
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MJE253G
MANUFACTURER STANDARD LEAD TIME: 9 WEEKS
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 150°C (TJ)
PACKAGE / CASE: TO-225AA, TO-126-3
PACKAGING: BULK PACK
POWER - MAX: 1.5W
SUPPLIER DEVICE PACKAGE: TO-225AA
TRANSISTOR TYPE: PNP
VCE SATURATION (MAX) @ IB, IC: 600MV @ 100MA, 1A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 100V
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