MJE802G

MJE802G

Transistor NPN - Darlington, TO-225AA 80V 4AThrough Hole

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  MJE802G

PACKAGE / CASE:  TO-225AA, TO-126-3

PACKAGING:  BULK PACK

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-225AA

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

BASE PART NUMBER:  MJE802

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  4A

CURRENT - COLLECTOR CUTOFF (MAX):  100ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  750 @ 1.5A, 3V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 80V 4A 40W THROUGH HOLE TO-225AA

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJE802G

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-225AA, TO-126-3

PACKAGING:  BULK PACK

POWER - MAX:  40W

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-225AA

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  2.5V @ 30MA, 1.5A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V

ALTERNATE PARTS:  BD679G

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