BASE PART NUMBER: MJE802
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 4A
CURRENT - COLLECTOR CUTOFF (MAX): 100ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 750 @ 1.5A, 3V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 80V 4A 40W THROUGH HOLE TO-225AA
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MJE802G
MANUFACTURER STANDARD LEAD TIME: 2 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-225AA, TO-126-3
PACKAGING: BULK PACK
POWER - MAX: 40W
STANDARD PACKAGE: 500
SUPPLIER DEVICE PACKAGE: TO-225AA
TRANSISTOR TYPE: NPN - DARLINGTON
VCE SATURATION (MAX) @ IB, IC: 2.5V @ 30MA, 1.5A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
ALTERNATE PARTS: BD679G
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