BASE PART NUMBER: MMBT5089
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 50MA
CURRENT - COLLECTOR CUTOFF (MAX): 50NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 400 @ 100ΜA, 5V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 25V 50MA 50MHZ 300MW SURFACE MOUNT SOT-23-3 (TO-236)
FREQUENCY - TRANSITION: 50MHZ
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MMBT5089LT1G
MANUFACTURER STANDARD LEAD TIME: 36 WEEKS
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 300MW
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 500MV @ 1MA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 25V
ALTERNATE PARTS: SMMBT5089LT1G
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