CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 300MA (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 3.2NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 65PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MMFT960T1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -65°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 800MW (TA)
RDS ON (MAX) @ ID, VGS: 1.7 OHM @ 1A, 10V
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: SOT-223
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 3.5V @ 1MA
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