CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 32A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
EXPANDED DESCRIPTION: N-CHANNEL 200V 32A (TC) 180W (TC) THROUGH HOLE TO-247
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 120NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 5000PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MTW32N20E
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-247-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 180W (TC)
RDS ON (MAX) @ ID, VGS: 75 MOHM @ 16A, 10V
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: TO-247
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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