MUN5316DW1T1G

MUN5316DW1T1G

1 NPN, 1 PNP - Pre-Biased (Dual)

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  MUN5316DW1T1G

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SC-88/SC70-6/SOT-363

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  160 @ 5MA, 10V

EXPANDED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 250MW SURFACE MOUNT SC-88/SC70-6/SOT-363

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MUN5316DW1T1G

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

POWER - MAX:  250MW

RESISTOR - BASE (R1) (OHMS):  4.7K

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SC-88/SC70-6/SOT-363

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  250MV @ 1MA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

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