NDDP010N25AZ-1H

NDDP010N25AZ-1H

FETs - Single IPAK/TP Through Hole

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  NDDP010N25AZ-1H

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  IPAK/TP

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 250V 10A (TA) 1W (TA), 52W (TC) THROUGH HOLE IPAK/TP

DRAIN TO SOURCE VOLTAGE (VDSS):  250V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  16NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  980PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NDDP010N25AZ-1H

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  1W (TA), 52W (TC)

RDS ON (MAX) @ ID, VGS:  420 MOHM @ 5A, 10V

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  IPAK/TP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4.5V @ 1MA

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