CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 4A (TA) 3W (TA) SURFACE MOUNT SOT-223-4

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  20NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  345PF @ 25V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NDT3055L

MANUFACTURER STANDARD LEAD TIME:  42 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3W (TA)

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 4A, 10V

SUPPLIER DEVICE PACKAGE:  SOT-223-4

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 250ΜA