CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.6A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  59V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  7NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  250PF @ 35V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NIF9N05CLT1G

MOISTURE SENSITIVITY LEVEL (MSL):  3 (168 HOURS)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER - MAX:  1.69W

RDS ON (MAX) @ ID, VGS:  125 MOHM @ 2.6A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223

VGS(TH) (MAX) @ ID:  2.5V @ 100ΜA

ALTERNATE PARTS:  NCV8440ASTT1G