NSBA114EDXV6T1G
2 PNP - Pre-Biased (Dual)Call for availability
Manufactured by:
Mfr Part#: NSBA114EDXV6T1G
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
STANDARD PACKAGE: 4,000
SUPPLIER DEVICE PACKAGE: SOT-563
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 35 @ 5MA, 10V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 500MW SURFACE MOUNT SOT-563
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NSBA114EDXV6T1G
MANUFACTURER STANDARD LEAD TIME: 2 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 500MW
RESISTOR - BASE (R1) (OHMS): 10K
RESISTOR - EMITTER BASE (R2) (OHMS): 10K
STANDARD PACKAGE: 4,000
SUPPLIER DEVICE PACKAGE: SOT-563
TRANSISTOR TYPE: 2 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 250MV @ 300ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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