CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 6A
CURRENT - COLLECTOR CUTOFF (MAX): 100NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 120 @ 1A, 2V
EXPANDED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 60V 6A 100MHZ 800MW SURFACE MOUNT SOT-223
FREQUENCY - TRANSITION: 100MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NSS60601MZ4T1G
MANUFACTURER STANDARD LEAD TIME: 37 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER - MAX: 800MW
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: SOT-223
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 300MV @ 600MA, 6A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 60V
ALTERNATE PARTS: NSV60601MZ4T3G NSS60601MZ4T3G
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