NSTB1002DXV5T1G

NSTB1002DXV5T1G

1 NPN Pre-Biased, 1 PNP

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  NSTB1002DXV5T1G

PACKAGE / CASE:  SOT-553

PACKAGING:  REEL

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-553

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA, 200MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 10V / 100 @ 1MA, 10V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN PRE-BIASED, 1 PNP 50V, 40V 100MA, 200MA 250MHZ 500MW SURFACE MOUNT SOT-553

FREQUENCY - TRANSITION:  250MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSTB1002DXV5T1G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-553

PACKAGING:  REEL

POWER - MAX:  500MW

RESISTOR - BASE (R1):  47 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-553

TRANSISTOR TYPE:  1 NPN PRE-BIASED, 1 PNP

VCE SATURATION (MAX) @ IB, IC:  250MV @ 300ΜA, 10MA / 400MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V, 40V

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