NSVMUN5314DW1T3G
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 250MW SURFACE MOUNT SC-88/SC70-6/SOT-363Call for availability
Manufactured by:
Mfr Part#: NSVMUN5314DW1T3G
PACKAGE / CASE: 6-TSSOP, SC-88, SOT-363
PACKAGING: REEL
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: SC-88/SC70-6/SOT-363
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 80 @ 5MA, 10V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 250MW SURFACE MOUNT SC-88/SC70-6/SOT-363
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NSVMUN5314DW1T3G
MANUFACTURER STANDARD LEAD TIME: 30 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: 6-TSSOP, SC-88, SOT-363
PACKAGING: REEL
POWER - MAX: 250MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 47 KOHMS
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: SC-88/SC70-6/SOT-363
TRANSISTOR TYPE: 1 NPN, 1 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 250MV @ 300ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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