CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  27.5A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  P-CHANNEL 60V 27.5A (TA) 120W (TJ) SURFACE MOUNT D2PAK

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  50NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1680PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTB25P06T4G

MANUFACTURER STANDARD LEAD TIME:  28 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  120W (TJ)

RDS ON (MAX) @ ID, VGS:  82 MOHM @ 25A, 10V

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D2PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±15V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA