AVALANCHE ENERGY RATING (EAS):  454 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ABS) (ID):  60 A

DRAIN CURRENT-MAX (ID):  60 A

DRAIN-SOURCE ON RESISTANCE-MAX:  14 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E0

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  CASE 418B-04

MANUFACTURER PART NUMBER:  NTB60N06

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  150 W

PULSED DRAIN CURRENT-MAX (IDM):  180 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN80PB20)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON