AVALANCHE ENERGY RATING (EAS):  74 MJ

BRAND NAME:  ON SEMICONDUCTOR

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ABS) (ID):  3 A

DRAIN CURRENT-MAX (ID):  3 A

DRAIN-SOURCE ON RESISTANCE-MAX:  120 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-261AA

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E0

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  318E-04

MANUFACTURER PART NUMBER:  NTF3055L108T1

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  TO-261AA

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  2.1 W

PULSED DRAIN CURRENT-MAX (IDM):  9 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN80PB20)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON