CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.9A (TJ)
DETAILED DESCRIPTION: N-CHANNEL 20V 2.9A (TJ) 910MW (TJ) SURFACE MOUNT CHIPFET?
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET FEATURE: SCHOTTKY DIODE (ISOLATED)
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 4NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 300PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTHD4N02FT1G
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SMD, FLAT LEAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 910MW (TJ)
RDS ON (MAX) @ ID, VGS: 80 MOHM @ 2.9A, 4.5V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: CHIPFET?
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.2V @ 250ΜA
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