CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.9A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 4.9A (TA) 800MW (TA) SURFACE MOUNT CHIPFET?

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  18NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  900PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTHS4166NT1G

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  800MW (TA)

RDS ON (MAX) @ ID, VGS:  22 MOHM @ 4.9A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  CHIPFET?

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.3V @ 250ΜA