CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.3A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  DIODE (ISOLATED)

FET TYPE:  MOSFET P-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  6.2NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  531PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTLJF3117PT1G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-WDFN EXPOSED PAD

PACKAGING:  REEL

POWER - MAX:  710MW

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 2A, 4.5V

SERIES:  ΜCOOL?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-WDFN (2X2)

VGS(TH) (MAX) @ ID:  1V @ 250ΜA