NTMD6P02R2G

NTMD6P02R2G

- FETs - Arrays 1.2V @ 250µA, 20V

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  NTMD6P02R2G

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SOIC

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.8A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 P-CHANNEL (DUAL) 20V 4.8A 750MW SURFACE MOUNT 8-SOIC

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  35NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1700PF @ 16V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMD6P02R2G

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  750MW

RDS ON (MAX) @ ID, VGS:  33 MOHM @ 6.2A, 4.5V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SOIC

VGS(TH) (MAX) @ ID:  1.2V @ 250ΜA

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