CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11.3A, 18.1A

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (DUAL) ASYMMETRICAL 30V 11.3A, 18.1A 1.1W SURFACE MOUNT 8-DFN (5X6)

FET FEATURE:  STANDARD

FET TYPE:  2 N-CHANNEL (DUAL) ASYMMETRICAL

GATE CHARGE (QG) (MAX) @ VGS:  22.2NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1153PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMFD4C86NT1G

MANUFACTURER STANDARD LEAD TIME:  24 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER - MAX:  1.1W

RDS ON (MAX) @ ID, VGS:  5.4 MOHM @ 30A, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  8-DFN (5X6)

VGS(TH) (MAX) @ ID:  2.2V @ 250ΜA

ALTERNATE PARTS:  NTMFD4C86NT3G