CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
EXPANDED DESCRIPTION: N-CHANNEL 30V 760MW (TA) SURFACE MOUNT
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1252PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTMFS4C09NBT1G
MANUFACTURER STANDARD LEAD TIME: 29 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
POWER DISSIPATION (MAX): 760MW (TA)
STANDARD PACKAGE: 1,500
TECHNOLOGY: MOSFET (METAL OXIDE)
ALTERNATE PARTS: NTMFS4C09NBT3G
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