Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
EXPANDED DESCRIPTION: N-CHANNEL 30V 9A (TA) 760MW (TA), 25.5W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10.9NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1252PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTMFS4C09NT1G
MANUFACTURER STANDARD LEAD TIME: 38 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 760MW (TA), 25.5W (TC)
RDS ON (MAX) @ ID, VGS: 5.8 MOHM @ 30A, 10V
STANDARD PACKAGE: 1,500
SUPPLIER DEVICE PACKAGE: 5-DFN (5X6) (8-SOFL)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 2.1V @ 250ΜA
ALTERNATE PARTS: NTMFS4C09NT3G
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