Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 224MA (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.5V, 4.5V
EXPANDED DESCRIPTION: N-CHANNEL 20V 224MA (TA) 120MW (TA) SURFACE MOUNT 3-XLLGA (0.62X0.62)
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 0.7NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 15.8PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTNS3190NZT5G
MANUFACTURER STANDARD LEAD TIME: 13 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 3-XFDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 120MW (TA)
RDS ON (MAX) @ ID, VGS: 1.4 OHM @ 100MA, 4.5V
STANDARD PACKAGE: 8,000
SUPPLIER DEVICE PACKAGE: 3-XLLGA (0.62X0.62)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 1V @ 250ΜA
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