CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 40A (TC)
DETAILED DESCRIPTION: N-CHANNEL 650V 40A (TC) 313W (TC) THROUGH HOLE TO-220-3
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 81NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3410PF @ 400V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTP082N65S3F
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
POWER DISSIPATION (MAX): 313W (TC)
RDS ON (MAX) @ ID, VGS: 82 MOHM @ 20A, 10V
SERIES: FRFET®, SUPERFET® II
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: TO-220-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 5V @ 4MA
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