NTR1P02LT3G
P-CHANNEL 20V 1.3A (TA) 400MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)Call for availability
Manufactured by:
Mfr Part#: NTR1P02LT3G
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.3A (TA)
DETAILED DESCRIPTION: P-CHANNEL 20V 1.3A (TA) 400MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 5.5NC @ 4V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 225PF @ 5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTR1P02LT3G
MANUFACTURER STANDARD LEAD TIME: 4 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 400MW (TA)
RDS ON (MAX) @ ID, VGS: 220 MOHM @ 750MA, 4.5V
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.25V @ 250ΜA
ALTERNATE PARTS: NTR1P02LT1G
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