CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 9A (TA) 840MW (TA) SURFACE MOUNT 8-WDFN (3.3X3.3)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  56NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5000PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTTFS3A08PZTAG

MANUFACTURER STANDARD LEAD TIME:  31 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERWDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  840MW (TA)

RDS ON (MAX) @ ID, VGS:  6.7 MOHM @ 12A, 4.5V

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  8-WDFN (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA