CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11A (TA), 61A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  P-CHANNEL 60V 11A (TA), 61A (TC) 4.1W (TA), 118W (TC) SURFACE MOUNT DPAK-3

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  85NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4800PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVD5117PLT4G

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  4.1W (TA), 118W (TC)

RDS ON (MAX) @ ID, VGS:  16 MOHM @ 29A, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  DPAK-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA