CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.6A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  P-CHANNEL 60V 2.6A (TA) 1W (TA) SURFACE MOUNT SOT-223 (TO-261)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  14.3NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  492PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVF2955T1G

MANUFACTURER STANDARD LEAD TIME:  28 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1W (TA)

RDS ON (MAX) @ ID, VGS:  170 MOHM @ 750MA, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223 (TO-261)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 1MA