Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6.8A (TA)
DETAILED DESCRIPTION: N-CHANNEL 30V 6.8A (TA) 630MW (TA) SURFACE MOUNT 6-UDFN (2X2)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 3.3V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 18NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1172PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NVLUS4C12NTAG
MANUFACTURER STANDARD LEAD TIME: 20 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 6-UDFN EXPOSED PAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 630MW (TA)
RDS ON (MAX) @ ID, VGS: 9 MOHM @ 9A, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-UDFN (2X2)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.1V @ 250ΜA
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