NVLUS4C12NTAG

NVLUS4C12NTAG

N-CHANNEL 30V 6.8A (TA) 630MW (TA) SURFACE MOUNT 6-UDFN (2X2)

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Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  NVLUS4C12NTAG

PACKAGE / CASE:  6-UDFN EXPOSED PAD

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-UDFN (2X2)

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.8A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 6.8A (TA) 630MW (TA) SURFACE MOUNT 6-UDFN (2X2)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  3.3V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  18NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1172PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVLUS4C12NTAG

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-UDFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  630MW (TA)

RDS ON (MAX) @ ID, VGS:  9 MOHM @ 9A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-UDFN (2X2)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.1V @ 250ΜA

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