Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DETAILED DESCRIPTION: N-CHANNEL 100V 3.9W (TA), 198W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 9.4NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 5320PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS NON-COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NVMFS6B03NLT1G
MANUFACTURER STANDARD LEAD TIME: 32 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 3.9W (TA), 198W (TC)
RDS ON (MAX) @ ID, VGS: 4 MOHM @ 20A, 10V
SERIES: AUTOMOTIVE, AEC-Q101
STANDARD PACKAGE: 1,500
SUPPLIER DEVICE PACKAGE: 5-DFN (5X6) (8-SOFL)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±16V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
ALTERNATE PARTS: NVMFS6B03NLT3G
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