Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 23A (TA), 157A (TC)
DETAILED DESCRIPTION: N-CHANNEL 80V 23A (TA), 157A (TC) 3.8W (TA), 166W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)
DRAIN TO SOURCE VOLTAGE (VDSS): 80V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 64NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4120PF @ 40V
LEAD FREE STATUS: LEAD FREE
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NVMFS6H801NT1G
MANUFACTURER STANDARD LEAD TIME: 31 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: 8-POWERTDFN, 5 LEADS
PACKAGING: REEL
POWER DISSIPATION (MAX): 3.8W (TA), 166W (TC)
RDS ON (MAX) @ ID, VGS: 2.8 MOHM @ 50A, 10V
SERIES: AUTOMOTIVE, AEC-Q101
STANDARD PACKAGE: 1,500
SUPPLIER DEVICE PACKAGE: 5-DFN (5X6) (8-SOFL)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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