Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
ADDITIONAL FEATURE: ULTRA-LOW RESISTANCE
CONFIGURATION: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 60 V
DRAIN CURRENT-MAX (ID): 115 MA
DRAIN-SOURCE ON RESISTANCE-MAX: 3 O
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
FEEDBACK CAP-MAX (CRSS): 5 PF
JESD-30 CODE: R-PDSO-G6
MANUFACTURER: PANJIT SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2N7002KDW
NUMBER OF ELEMENTS: 2
NUMBER OF TERMINALS: 6
OPERATING MODE: ENHANCEMENT MODE
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PDSO-G6
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PBFREE CODE: YES
PEAK REFLOW TEMPERATURE (CEL): NOT SPECIFIED
PIN COUNT: 6
POLARITY/CHANNEL TYPE: N-CHANNEL
QUALIFICATION STATUS: NOT QUALIFIED
SURFACE MOUNT: YES
TERMINAL FINISH: NOT SPECIFIED
TERMINAL FORM: GULL WING
TERMINAL POSITION: DUAL
TIME@PEAK REFLOW TEMPERATURE-MAX (S): NOT SPECIFIED
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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