ADDITIONAL FEATURE:  UL RECOGNIZED

BREAKDOWN VOLTAGE-MIN:  600 V

CONFIGURATION:  BRIDGE, 4 ELEMENTS

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  BRIDGE RECTIFIER DIODE

FORWARD VOLTAGE-MAX (VF):  1 V

JESD-30 CODE:  R-PDSO-G4

MANUFACTURER:  PANJIT SEMICONDUCTOR

MANUFACTURER PART NUMBER:  B6S_R2_00001

NON-REP PK FORWARD CURRENT-MAX:  30 A

NUMBER OF ELEMENTS:  4

NUMBER OF PHASES:  1

NUMBER OF TERMINALS:  4

OPERATING TEMPERATURE-MAX:  150 °C

OPERATING TEMPERATURE-MIN:  -55 °C

OUTPUT CURRENT-MAX:  800 MA

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POWER DISSIPATION (MAX):  1.4 W

REP PK REVERSE VOLTAGE-MAX:  600 V

SUBCATEGORY:  BRIDGE RECTIFIER DIODES

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED