CONFIGURATION:  SINGLE

DS BREAKDOWN VOLTAGE-MIN:  12 V

DRAIN CURRENT-MAX (ID):  2 A

DRAIN-SOURCE ON RESISTANCE-MAX:  700 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSSO-F3

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  2SJ317NY

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-F3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  P-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  FLAT

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON