CONFIGURATION: SINGLE
DRAIN CURRENT-MAX (ABS) (ID): 100 MA
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
MANUFACTURER: RENESAS ELECTRONICS CORPORATION
MANUFACTURER PART NUMBER: 2SK1399-T1B
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE DESCRIPTION: ,
POLARITY/CHANNEL TYPE: N-CHANNEL
POWER DISSIPATION-MAX (ABS): 200 MW
SUBCATEGORY: FET GENERAL PURPOSE POWER
SURFACE MOUNT: YES
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