ACCESS TIME-MAX:  45 NS

ALTERNATE MEMORY WIDTH:  8

JESD-30 CODE:  R-PDSO-G48

LENGTH:  18.4 MM

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  R1LV1616HSA-4SI#S1

MEMORY DENSITY:  16.7772 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  16

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  48

NUMBER OF WORDS:  1.0486 M

NUMBER OF WORDS CODE:  1000000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  1MX16

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP1

PACKAGE DESCRIPTION:  TSOP1,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL:  PARALLEL

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

SEATED HEIGHT-MAX:  1.2 MM

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  500 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  12 MM