2SB1730TL
BIPOLAR (BJT) TRANSISTOR PNP 12V 2A 360MHZ 400MW SURFACE MOUNT TUMT3Call for availability
Manufactured by:
Mfr Part#: 2SB1730TL
PACKAGE / CASE: 3-SMD, FLAT LEADS
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TUMT3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: 2SB1730
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 2A
CURRENT - COLLECTOR CUTOFF (MAX): 100NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 270 @ 200MA, 2V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR PNP 12V 2A 360MHZ 400MW SURFACE MOUNT TUMT3
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOTUMT3 CONSTITUTION MATERIAL LIST
FREQUENCY - TRANSITION: 360MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2SB1730TL
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: 3-SMD, FLAT LEADS
PACKAGING: REEL
POWER - MAX: 400MW
SIMULATION MODELS: 2SB1730 SPICE MODEL2SB1730 THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TUMT3
TRANSISTOR TYPE: PNP
VCE SATURATION (MAX) @ IB, IC: 180MV @ 50MA, 1A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 12V
Related Products
MFR. Name: Toshiba America Electronic Components
MFR. Name: Toshiba America Electronic Components
MFR. Name: Nexperia
MFR. Name: Nexperia
MFR. Name: Advanced Power
MFR. Name: Advanced Semiconductor
Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .