BR25G640FVT-3GE2

BR25G640FVT-3GE2

TSSOP

Call for availability

Manufactured by:

ROHM SEMICONDUCTOR

Mfr Part#:  BR25G640FVT-3GE2

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSSOP

PACKAGE DESCRIPTION:  TSSOP,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ADDITIONAL FEATURE:  ALSO OPERATES AT 1.6V WITH 3MHZ ,1.7V WITH 5MHZ AND 2.5V WITH 10MHZ

CLOCK FREQUENCY-MAX (FCLK):  20 MHZ

JESD-30 CODE:  R-PDSO-G8

LENGTH:  4.4 MM

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BR25G640FVT-3GE2

MEMORY DENSITY:  65.536 KBIT

MEMORY IC TYPE:  EEPROM

MEMORY WIDTH:  8

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  8

NUMBER OF WORDS:  8.192 K

NUMBER OF WORDS CODE:  8000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  8KX8

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSSOP

PACKAGE DESCRIPTION:  TSSOP,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL/SERIAL:  SERIAL

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

SEATED HEIGHT-MAX:  1.2 MM

SERIAL BUS TYPE:  SPI

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  650 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  3 MM

WRITE CYCLE TIME-MAX (TWC):  5 MS

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