ADDITIONAL FEATURE:  100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS

CLOCK FREQUENCY-MAX (FCLK):  200 KHZ

JESD-30 CODE:  R-PDSO-G8

LENGTH:  5 MM

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BR93LC56F-E2

MEMORY DENSITY:  2.048 KBIT

MEMORY IC TYPE:  EEPROM

MEMORY WIDTH:  16

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  8

NUMBER OF WORDS:  128 WORDS

NUMBER OF WORDS CODE:  128

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  128X16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  LSOP

PACKAGE DESCRIPTION:  LSOP,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, LOW PROFILE

PARALLEL/SERIAL:  SERIAL

PART PACKAGE CODE:  SOIC

PIN COUNT:  8

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.6 MM

SERIAL BUS TYPE:  MICROWIRE

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  1.27 MM

TERMINAL POSITION:  DUAL

WIDTH:  4.4 MM

WRITE CYCLE TIME-MAX (TWC):  25 MS