EMF5T2R
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN PRE-BIASED, 1 PNP 50V, 12V 100MA, 500MA 250MHZ, 260MHZ 150MW SURFACE MOUNT EMT6Call for availability
Manufactured by:
Mfr Part#: EMF5T2R
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: EMT6
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA, 500MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 68 @ 5MA, 5V / 270 @ 10MA, 2V
EXPANDED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN PRE-BIASED, 1 PNP 50V, 12V 100MA, 500MA 250MHZ, 260MHZ 150MW SURFACE MOUNT EMT6
FREQUENCY - TRANSITION: 250MHZ, 260MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: EMF5T2R
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 150MW
RESISTOR - BASE (R1) (OHMS): 47K
RESISTOR - EMITTER BASE (R2) (OHMS): 47K
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: EMT6
TRANSISTOR TYPE: 1 NPN PRE-BIASED, 1 PNP
VCE SATURATION (MAX) @ IB, IC: 300MV @ 500ΜA, 10MA / 250MV @ 10MA, 200MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V, 12V
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