EMH10T2R
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT EMT6Call for availability
Manufactured by:
Mfr Part#: EMH10T2R
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
STANDARD PACKAGE: 8,000
SUPPLIER DEVICE PACKAGE: EMT6
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: *MH10
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 56 @ 5MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT EMT6
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOEMT6 CONSTITUTION MATERIAL LISTEMH10 ESD DATA
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: EMH10T2R
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 150MW
RESISTOR - BASE (R1): 22 KOHMS
RESISTOR - EMITTER BASE (R2): 22 KOHMS
SIMULATION MODELS: EMH10 THERMAL MODEL
STANDARD PACKAGE: 8,000
SUPPLIER DEVICE PACKAGE: EMT6
TRANSISTOR TYPE: 2 NPN - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 300MV @ 500ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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