ADDITIONAL FEATURE:  DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

COLLECTOR CURRENT-MAX (IC):  30 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  68

JESD-30 CODE:  R-PDSO-G5

JESD-609 CODE:  E1

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FMA2AT149

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  5

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G5

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  PNP

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN SILVER COPPER

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  10

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

VCESAT-MAX:  300 MV