IMB7AT108
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-457Call for availability
Manufactured by:
Mfr Part#: IMB7AT108
PACKAGE / CASE: SOT-457
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-457
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 100 @ 1MA, 5V
EXPANDED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-457
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: IMB7AT108
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-457
PACKAGING: REEL
POWER - MAX: 300MW
RESISTOR - BASE (R1) (OHMS): 4.7K
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-457
TRANSISTOR TYPE: 2 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 300MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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