IMD10AT108

IMD10AT108

PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA, 500MA 250MHZ, 200MHZ 300MW SURFACE MOUNT SMT6

Call for availability

Manufactured by:

ROHM SEMICONDUCTOR

Mfr Part#:  IMD10AT108

PACKAGE / CASE:  SC-74, SOT-457

PACKAGING:  REEL

SUPPLIER DEVICE PACKAGE:  SMT6

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

BASE PART NUMBER:  MD10A

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA, 500MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 1MA, 5V / 68 @ 100MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA, 500MA 250MHZ, 200MHZ 300MW SURFACE MOUNT SMT6

FREQUENCY - TRANSITION:  250MHZ, 200MHZ

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  IMD10AT108

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SC-74, SOT-457

PACKAGING:  REEL

POWER - MAX:  300MW

RESISTOR - BASE (R1):  10 KOHMS, 100 OHMS

RESISTOR - EMITTER BASE (R2):  10 KOHMS

SUPPLIER DEVICE PACKAGE:  SMT6

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  300MV @ 1MA, 10MA / 300MV @ 5MA, 100MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

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