MTZJT-779.1A

MTZJT-779.1A

O-LALF-W2

Call for availability

Manufactured by:

ROHM SEMICONDUCTOR

Mfr Part#:  MTZJT-779.1A

PACKAGE BODY MATERIAL:  GLASS

PACKAGE DESCRIPTION:  O-LALF-W2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  LONG FORM

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ADDITIONAL FEATURE:  HIGH RELIABILITY

CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

JEDEC-95 CODE:  DO-34

JESD-30 CODE:  O-LALF-W2

KNEE IMPEDANCE-MAX:  120 O

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MTZJT-779.1A

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  GLASS

PACKAGE DESCRIPTION:  O-LALF-W2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  LONG FORM

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  500 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REVERSE CURRENT-MAX:  500 NA

SURFACE MOUNT:  NO

TECHNOLOGY:  ZENER

TERMINAL FORM:  WIRE

TERMINAL POSITION:  AXIAL

WORKING TEST CURRENT:  5 MA

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