CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 12V 4A (TA) 800MW (TA) SURFACE MOUNT TUMT3

DRAIN TO SOURCE VOLTAGE (VDSS):  12V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORAF040P01 ESD DATATUMT3 CONSTITUTION MATERIAL LIST

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  37NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4000PF @ 6V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RAF040P01TCL

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  3-SMD, FLAT LEADS

PACKAGING:  REEL

POWER DISSIPATION (MAX):  800MW (TA)

RDS ON (MAX) @ ID, VGS:  30 MOHM @ 4A, 4.5V

SIMULATION MODELS:  RAF040P01 SPICE MODELRAF040P01 THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TUMT3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  -8V

VGS(TH) (MAX) @ ID:  1V @ 1MA