RCD080N25TL

RCD080N25TL

N-CHANNEL 250V 8A (TA) 850MW (TA), 20W (TC) SURFACE MOUNT CPT3

Call for availability

Manufactured by:

ROHM SEMICONDUCTOR

Mfr Part#:  RCD080N25TL

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  CPT3

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 250V 8A (TA) 850MW (TA), 20W (TC) SURFACE MOUNT CPT3

DRAIN TO SOURCE VOLTAGE (VDSS):  250V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  25NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1440PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RCD080N25TL

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  850MW (TA), 20W (TC)

RDS ON (MAX) @ ID, VGS:  300 MOHM @ 4A, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  CPT3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 1MA

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