CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 2A (TA) 500MW (TA) SURFACE MOUNT MPT3

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4V, 10V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOMPT3 CONSTITUTION MATERIAL LISTRHP020N06 ESD DATA

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  14NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  140PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RHP020N06T100

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-243AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  500MW (TA)

RDS ON (MAX) @ ID, VGS:  200 MOHM @ 2A, 10V

SIMULATION MODELS:  RHP020N06 SPICE MODELRHP020N06 THERMAL MODEL

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  MPT3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 1MA